1、25V，1.0A互補低VCE（sat）晶體管在TLM621封裝

型號：CTLT3410-M621（NPN）、CTLT7410-M621（PNP）

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產品描述：

Central Semiconductor’s CTLT3410-M621 (NPN) and 
CTLT7410-M621 (PNP) are Low V_CE(SAT) transistors in a diminutive leadless 1x2mm surface mount package designed for applications where small size, operational efficiency, and high current capability are prime requirements. The thermally efficient package design makes these devices capable of dissipating up to 3 times the power of standard devices in similarly sized packages

特點：

• High operational efficiency 
• High power to footprint ratio (Power Density) 
• V_CE(SAT) = 100mA @ 40mV (NPN) and 50mV (PNP)
• High collector current

應用：

• DC-DC conversion
• Load switching 
• LCD backlighting
• Power management

好處：

• Energy effciency
• Complementary NPN and PNP devices
• Low profile package 

2、200V肖特基整流器制造：

主要型號有：CMSH1-200HE、CMSH3-200MHV、CMSH5-200HV、CSHD8-200、CSHDD16-200C

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產品描述：

Central Semiconductor's new 200V Schottky rectifiers extend the range of the most popular industry standard devices which provide superior performance and reliability. Now engineers can rethink designs in a whole new way.

特點：

• High reverse voltage capability
• High current rating
• High surge capability
• Low forward voltage
• Low reverse leakage current

應用：

• Solid State Lighting (SSL)
• Power over ethernet (PoE) peripherals
• Reverse polarity protection
• DC-DC conversion 
• General purpose full wave rectification
• Voltage clamping

好處：

• Energy efficiency
• Space saving
• Low total conduction losses
• High reliability

3、30V，100mA的TLM2D3D6封裝的肖特基二極管
型號：CTLSH01-30、CTLSH01-30L

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產品描述：

Central Semiconductor's CTLSH01-30 and CTLSH01-30L are high performing 30V, 100mA Schottky diodes designed for applications where ultra small size, low forward voltage and low reverse leakage losses are optimal requirements. The TLM2D3D6 package has a dimension of 0.65mm x 0.35mm and a low profile of 0.32mm making both of these devices ideal for space constrained designs requiring superior energy efficiency and performance characteristics optimized for logic level applications.

特點：

• Forward current: (I_O=100mA) 
• Low forward voltage drop 
• Low leakage current

應用：

• DC-DC conversion
• Volatage clamping 
• Circuit protection 
• Battery power management

好處：

• Energy effciency
• Space saving low profile package

4、高電流，高效節能的MOSFET在SOT-23F封裝

20V, 3.2A N-Channel MOSFET

型號：CMPDM203NH

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20V, 2.3A P-Channel MOSFET

型號：CMPDM202PH

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產品描述：

Central Semiconductor's CMPDM203NH (N-Channel) and CMPDM202PH (P-Channel) are Enhancement mode MOSFETs in industry standard SOT-23F packages that optimize high current capability and energy efficiency. The combination of high current, low gate charge and low on-resistance makes these devices the ideal selection for energy sensitive applications requiring higher drain currents

特點：

 • Low r_DS(ON):
       (0.033Ω @ V_GS=4.5V) N-Channel
       (0.064Ω @ V_GS=5.0V) P-Channel
  • High current I_D:
       3.2A (N-Channel)
       2.3A (P-Channel)
  • Low gate charge Q_gs: 
        0.8nC (N-Channel)
        1.3nC (P-Channel)

好處：

  • Energy efficiency
  • 9% lower package profile than the SOT-23 
  • Fast switching speed t_on: 
       6.0ns (N-Channel)
       15.2ns (P-Channel)

應用：

 • Load/Power switches 
  • Power supply converter circuits 
  • Battery powered portable equipment 
  • Motor control